FMM23N20 2.3a 20v n-channel enhancement-mode mosfet 20v n-channel enhancement-mode mosfet v ds = 20v r ds(on), vgs@4.5v , ids@2.8a = 60m r ds(on), vgs@2.5v, ids@2.0a = 115m features advanced trench process technology high density cell design for ultra low on-resistance fully characterized avalanche voltage and current improved shoot-through fom maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds 20 v gs 8 i d 2.3 i dm 10 t a = 25 o c 0.9 t a = 75 o c 0.57 t j , t stg -55 to 150 o c e as mj r jc junction-to-ambient thermal resistance (pcb mounted) r ja 145 note: 1. maximum dc current limited by the package 2. 1-in 2oz cu pcb board feb '06 rev 1 1 avalanche energy with single pulse i d =50a, v dd =25v, l=0.5mh operating junction and storage temperature range continuous drain current gate-source voltage maximum power dissipation n-channel mosfet o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current top view internal schematic diagram to-236 (sot-23) gate drain source 1) 2) 2
fm m 23 n 20 2.3 a 2 0 v n -channel enhancement-mode mosfet electrical characteristics paramete r symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = -10ua 20 - - v drain-source on-state resistance r ds(on) v gs = 4.5v, i d = 2.8a 45 60 drain-source on-state resistance r ds(on) v gs = 2.5v, i d = 2.0a 70 115 m dynamic total gate charge q g 3.69 gate-source charge q gs 0.70 gate-drain charge q gd 1.06 turn-on delay time t d(on) 6.16 turn-on rise time t r 7.56 turn-off delay time t d(off) 16.61 turn-off fall time t f 4.07 input capacitance c iss 427.12 output capacitance c oss 80.56 reverse transfer capacitance c rss 57.00 source-drain diode max. diode forward current i s a diode forward voltage v sd i s = -1.6a, v gs = 0v v note : pulse test: pulse width <= 300us, duty cycle<= 2% feb '06 rev 1 2 n-channel enhancement-mode mosfet v ds = 6v, v gs = 0v f = 1.0 mhz pf nc v dd = 6v, r l = 6 = 1,
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